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Sign In. Access provided by: anon Sign Out. The future of power semiconductor device technology Abstract: Power electronic systems have benefited greatly during the past ten years from the revolutionary advances that have occurred in power discrete devices. The introduction of power metal-oxide-semiconductor field-effect transistors MOSFETs in the s and the insulated gate bipolar transistors IGBTs in the s enabled design of very compact high-efficiency systems due to the greatly enhanced power gain resulting from the high input impedance of these structures.
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Recently, significant improvements in the performance of silicon-power MOSFETs has been achieved by using innovative vertical structures with charge coupled regions. Meanwhile, silicon IGBTs continue to dominate the medium- and high-voltage application space sue to scaling of their voltage ratings and refinements to their gate structure achieved by using very large scale integration VLSI technology and trench gate regions.